A Regulated Charge Pump for Tunneling Floating-Gate Transistors

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Charge-Mode Defuzzifiers using Multiple Input Floating-Gate Transistors

A novel and versatile implementation for analog defuzzification with fixed singleton coefficienls is introduced. It is based on differential pairs with multiple input floating gate transistors and on Gilben uanslinearcells. The singlcton cocfficients are determined by relative capacitance values. Experinlental results of a breadboard prototype that verify the proposed schemc are shown.

متن کامل

Floating Gate Charge-Sharing: a Novel Circuit for Analog Trimming

A floating gate charge-sharing circuit that can be electrically programmed for precise positive and negative voltage changes, and can be implemented in a standard CMOS VLSI process is presented. With the advantage of its longterm charge-retention, the floating gate charge-sharing circuit is suitable for providing a compact, non-volatile and high-precision analog trimming method to trim the offs...

متن کامل

SPICE-compatible modelling technique for simulating floating-gate transistors

A technique is introduced to enable the simulation of floating-gate transistors within standard analogue circuit simulators, such as SPICE. This technique can be used in all types of circuit simulations, ranging from DC sweeps to charge-modification scenarios. The technique is then used to simulate several analogue circuits, the results of which show strong agreement with identical circuits fab...

متن کامل

Direct charge measurement in Floating Gate transistors of Flash EEPROM using Scanning Electron Microscopy

We present a characterization methodology for fast direct measurement of the charge accumulated on Floating Gate (FG) transistors of Flash EEPROM cells. Using a Scanning Electron Microscope (SEM) in Passive Voltage Contrast (PVC) mode we were able to distinguish between '0' and '1' bit values stored in each memory cell. Moreover, it was possible to characterize the remaining charge on the FG; t...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Transactions on Circuits and Systems I: Regular Papers

سال: 2017

ISSN: 1549-8328,1558-0806

DOI: 10.1109/tcsi.2016.2613080